Nexperia, the skilled in important semiconductors, immediately extends its ‘ASFETs for Hotswap and Mushy Begin’ portfolio with the introduction of 10 new 25 V and 30 V absolutely optimized units, combining industry-leading enhanced secure working space (SOA) efficiency with extraordinarily low RDS(on), making them excellent to be used in 12 V hotswap purposes together with knowledge heart servers and communications gear.
For a number of years, Nexperia has been combining confirmed MOSFET experience and broad utility understanding to develop market-leading ASFETs, units during which crucial MOSFET efficiency traits are enhanced to fulfill the necessities of specific purposes. For the reason that launch of ASFETs, success has been seen with merchandise optimized for battery isolation, DC motor management, Energy-over-Ethernet, automotive airbag purposes and extra.
In-rush currents can current a reliability problem in hotswap purposes. Nexperia, the unique pioneer of enhanced SOA MOSFETs, has addressed this concern by designing a portfolio of ‘ASFETs for Hotswap and Mushy Begin with enhanced SOA’ which are absolutely optimized for such purposes. The PSMNR67-30YLE ASFET delivers 2.2x stronger SOA (12 V @100 mS) than earlier applied sciences whereas having an RDS(on) (max) as little as 0.7 mΩ. The Spirito impact (represented by the steeper downward slope discovered on SOA curves at increased voltages) has been eradicated, whereas distinctive efficiency is maintained throughout the complete voltage and temperature vary (in comparison with unoptimized units).
Nexperia additional helps designers by eradicating the necessity to thermally de-rate designs, by absolutely characterizing these new units at 125 °C and offering scorching SOA datasheet curves.
With eight new units (three 25 V and 5 30 V) out there in a alternative of LFPAK56 & LFPAK56E packages with RDS(on) starting from 0.7 mΩ to 2 mΩ, nearly all of hotswap and smooth begin purposes are addressed. Two extra 25 V merchandise (which could have an excellent decrease RDS(on) of 0.5 mΩ) are deliberate for launch over the approaching months.